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1/12 january 2005 STD2NK70Z - STD2NK70Z-1 n-channel 700 v - 6 ? - 1.6 a dpak/ipak zener-protected supermesh? mosfet table 1: general features typical r ds (on) = 6 ? extremely high dv/dt capability esd improved capability 100% avalanche tested new high voltage benchmark gate charge minimized description the supermesh? series is obtained through an extreme optimization of st?s well established strip-based powermesh? layout. in addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. such series complements st full range of high vltage mos- fets including revolutionary mdmesh? products. applications single-ended smps in monitors, computer and industrial application welding equipment flyback configuration for battery charger table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss r ds(on) i d pw STD2NK70Z STD2NK70Z-1 700 v 700 v 7 ? 7 ? 1.6 a 1.6 a 45 w 45 w 1 3 3 2 1 dpak ipak sales type marking package packaging STD2NK70Zt4 d2nk70z dpak tape & reel STD2NK70Z-1 d2nk70z ipak tube rev. 2
STD2NK70Z - STD2NK70Z-1 2/12 table 3: absolute maximum ratings (*) pulse width limited by safe operating area (1) i sd 1.6 a, di/dt 200 a/s, vdd v (br)dss table 4: thermal data table 5: avalanche characteristics table 6: gate-source zener diode protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the device ? s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device ? s integrity. these integrated zener diodes thus avoid the usage of external components. symbol parameter value unit v ds drain-source voltage (v gs = 0) 700 v v dgr drain-gate voltage (r gs = 20 k ?) 700 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 1.6 a i d drain current (continuous) at t c = 100 c 1a i dm (*) drain current (pulsed) 6.4 a p tot total dissipation at t c = 25 c 45 w derating factor 0.36 w/ c v esd(g-s) gate source esd (hbm-c = 100pf, r = 1.5 k ?) 2000 v dv/dt (1) peak diode recovery voltage slope 4.5 v/ns t stg storage temperature -55 to 150 c t j max. operating junction temperature rthj-case thermal resistance junction-case max 2.78 c/w rthj-amb t l thermal resistance junction-ambient max maximum lead temperature for soldering purpose 100 300 c/w c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 1.6 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 110 mj symbol parameter test condition min. typ. max unit bv gso gate-source breakdown voltage igs= 1ma (open drain) 30 a
3/12 STD2NK70Z - STD2NK70Z-1 table 7: electrical characteristics (t case =25 c unless otherwise specified) on /off table 8: dynamic table 9: source drain diode (1) pulsed: pulse duration = 300 s, duty cycle 1.5% (2) pulse width limited by safe operating area (3) c oss eq . is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 700 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 0.8 a 6 7 ? symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 15 v , i d = 0.8 a 1.4 s c oss eq. (3) equivalent output capacitance v gs = 0 v, v ds = 0 to 560 v 17 c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 280 35 6.5 pf pf pf t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 350 v, i d = 0.8 a, r g = 4.7 ?, v gs = 10 v (see figure 17) 7 17 20 35 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 560 v, i d = 0.8 a, v gs = 10 v (see figure 20) 11.4 2 6.8 15 nc nc nc symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 1.6 6.4 a a v sd (1) forward on voltage i sd = 1.6 a, v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 1.6, di/dt = 100 a/s v dd =50 v, t j = 25 c (see figure 18) 334 918 5.5 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 1.6, di/dt = 100 a/s v dd = 50 v, t j = 150 c (see figure 18) 350 1050 6 ns c a
STD2NK70Z - STD2NK70Z-1 4/12 figure 3: safe operating area figure 4: output characteristics figure 5: transconductance figure 6: thermal impedance figure 7: transfer characteristics figure 8: static drain-source on resistance
5/12 STD2NK70Z - STD2NK70Z-1 figure 9: gate charge vs gate-source voltage figure 10: normalized gate thereshold volt- age vs temperature figure 11: dource-drain diode forward char- acteristics figure 12: capacitance variations figure 13: normalized on resistance vs tem- perature figure 14: normalized breakdown voltage vs temperature
STD2NK70Z - STD2NK70Z-1 6/12 figure 15: maximum avalanche energy vs temperature
7/12 STD2NK70Z - STD2NK70Z-1 figure 16: unclamped inductive load test cir- cuit figure 17: switching times test circuit for resistive load figure 18: test circuit for inductive load switching and diode recovery times figure 19: unclamped inductive wafeform figure 20: gate charge test circuit
STD2NK70Z - STD2NK70Z-1 8/12 dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data
9/12 STD2NK70Z - STD2NK70Z-1 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 1 3 = = b3 b b6 b2 e g = = = = b5 2 to-251 (ipak) mechanical data 0068771-e
STD2NK70Z - STD2NK70Z-1 10/12 tape and reel shipment (suffix ?t4?)* tube shipment (no suffix)* dpak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters all dimensions are in millimeters
11/12 STD2NK70Z - STD2NK70Z-1 table 10: revision history date revision description of changes 07-sep-2004 1 first release, complete document. 24-jan-2005 2 new curve, figure 3, and new rds(on) value max.
STD2NK70Z - STD2NK70Z-1 12/12 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america

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